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2SC3346 |
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| Part Number | 2SC3346 |
| Manufacturer | INCHANGE |
| Description | ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC=6A ·High Speed Switching Time : tstg= 1.0μs ·Complement to Type 2SA1329 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-. |
| Features | mitter Saturation Voltage IC= 6A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 0.3A ICBO Collector Cutoff Current VCB= 80V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE-1 DC Current Gain IC= 1A ; VCE= 1V hFE-2 DC Current Gain IC= 6A ; VCE= 1V fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 5V COB Output Capacitance IE= 0 ; VCB= 10V; ftest= 1.0MHz Switching times ton Turn-on Time tstg Storage Time tf Fall Time IB1= -IB2= 0.3A RL= 5Ω;PW=20μs Duty≤1% MIN TYP. MAX UNIT 80 V 0.2 0.4 V 0.9 1.2 V 10 μA 10 μA 70 240 40 80 MHz 220 pF . |
| Datasheet |
 2SC3346 Data Sheet
PDF 195.85KB |
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2SC3346 |
| Part Number | 2SC3346 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-220C package ·Complement to type 2SA1329 ·High speed switching time : tstg=1.0µs(Typ.) ·Low collector saturation voltage : VCE(sat)=0.4V(Max.)@IC=6A 2SC3346 APPLICATIONS ·For high current switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTIO. |
| Features | mitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA ; IB=0 IC=6A; IB=0.3A IC=6A; IB=0.3A VCB=80V ;IE=0 VEB=6V; IC=0 IC=1A ; VCE=1V IC=6A ; VCE=1V IC=1A ; VCE=5V IE=0 ; VCB=10V,f=1MHz 70 40 80 MIN 80 0.2 0.9 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB 2SC3346 TYP. MAX. |
2SC3346 |
| Part Number | 2SC3346 |
| Manufacturer | Toshiba |
| Title | Silicon NPN Transistor |
| Description | : SI LICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. FEATURES . Low Collector Saturation Voltage : vCE(sat)=0.4V (Max.) (at I C =6A) . High Speed Switching Time : t st g=1.0>us (Typ.) . Complementary to 2SA1329 Unit in mm 3.0:3 MAX 03.6±Q2 MAXIMUM RATINGS (Ta=25°C) CH. |
| Features | . Low Collector Saturation Voltage : vCE(sat)=0.4V (Max.) (at I C =6A) . High Speed Switching Time : t st g=1.0>us (Typ.) . Complementary to 2SA1329 Unit in mm 3.0:3 MAX 03.6±Q2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperatur. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3344 |
Toshiba |
SILICON NPN TRIPLE DIFFUSED TYPE TRANSISTOR |
|
| 2 | 2SC3345 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SC3345 |
Toshiba |
Silicon NPN Transistor |
|
| 4 | 2SC3345 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SC3300 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SC3300 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SC3301 |
Toshiba |
Silicon NPN Transistor |
|
| 8 | 2SC3302 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 9 | 2SC3303 |
SeCoS |
NPN Epitaxial Planar Silicon Transistor |
|
| 10 | 2SC3303 |
Toshiba Semiconductor |
SILICON NPN TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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