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2SC3345 |
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| Part Number | 2SC3345 |
| Manufacturer | SavantIC |
| Description | ·With TO-220 package ·Complement to type 2SA1328 ·Low collector saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emit. |
| Features | cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=50mA ,IB=0 IC=6A; IB=0.3A IC=6A; IB=0.3A VCB=60V; IE=0 VEB=6V; IC=0 IC=1A ; VCE=1V IC=6A ; VCE=1V IE=0 ; VCB=10V;f=1MHz IC=1A ; VCE=5V 70 40 180 90 pF MHz MIN 50 0.4 1.2 10 10 240 TYP. MAX UNIT V V V µA µA SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob fT Switching times ton ts tf Turn-on time Storage time Fall time IC=6.0A IB1=- IB2=0.3A RL=5B;VCC=30V 0.2 1.0 0.2 µs µs µs hFE-1 Classifications O 70-140 Y 120-240 2 SavantIC Semiconductor www.DataSheet4U.com. |
| Datasheet |
 2SC3345 Data Sheet
PDF 176.31KB |
| Distributor | Stock | Price | Buy |
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2SC3345 |
| Part Number | 2SC3345 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Low Collector Saturation Voltage : VCE(sat)= 0.4V(Max)@ IC=6A ·High Speed Switching Time ; tstg= 1.0μs ·Complement to Type 2SA1328 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications ABSOLUTE MAXIMUM RAT. |
| Features | tter Saturation Voltage IC= 6A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 0.3A ICBO Collector Cutoff Current VCB=60V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC=0 hFE-1 DC Current Gain IC= 1A ; VCE= 1V hFE-2 DC Gurrent Gain IC= 6A ; VCE= 1V fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 5V COB Output Capacitance IE= 0 ; VCB= 10V;ftest= 1.0MHz Switching . |
2SC3345 |
| Part Number | 2SC3345 |
| Manufacturer | Toshiba |
| Title | Silicon NPN Transistor |
| Description | SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC3345 HIGH CURRENT SWITCHING APPLICATIONS. FEATURES . Low Collector Saturation Voltage : VC E(sat)=0..4V(Max.) (at Ic=6A) . High Speed Switching Time : t s tg=1.0^s (Typ.) . Complementary to 2SA1328 Unit in mm 10.3 MAX. 03.6±O.2 / s of x' Mr X 5 T to. |
| Features | . Low Collector Saturation Voltage : VC E(sat)=0..4V(Max.) (at Ic=6A) . High Speed Switching Time : t s tg=1.0^s (Typ.) . Complementary to 2SA1328 Unit in mm 10.3 MAX. 03.6±O.2 / s of x' Mr X 5 T to MIN. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction T. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3344 |
Toshiba |
SILICON NPN TRIPLE DIFFUSED TYPE TRANSISTOR |
|
| 2 | 2SC3346 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SC3346 |
Toshiba |
Silicon NPN Transistor |
|
| 4 | 2SC3346 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SC3300 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SC3300 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SC3301 |
Toshiba |
Silicon NPN Transistor |
|
| 8 | 2SC3302 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 9 | 2SC3303 |
SeCoS |
NPN Epitaxial Planar Silicon Transistor |
|
| 10 | 2SC3303 |
Toshiba Semiconductor |
SILICON NPN TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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