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2SC3309 |
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| Part Number | 2SC3309 |
| Manufacturer | SavantIC |
| Description | ·With TO-220Fa package ·High collector breakdown voltage ·Excellent switching times APPLICATIONS ·Switching regulators and high voltage switching applications ·High speed DC-DC converter application PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IC. |
| Features | down voltage Collector -base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA ;IB=0 IE=1mA; IE=0 IC=1A; IB=0.2A IC=1A; IB=0.2A VCB=400V; IE=0 VEB=7V; IC=0 IC=0.1A ; VCE=5V IC=1A ; VCE=5V 20 8 MIN 400 500 2SC3309 SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 TYP. MAX UNIT V V 1.0 1.5 100 1 V V µA mA Switching times tr ts tf Rise time Storage time Fall time IB1=-IB2=0.08A VCC<200V;RL=250> PW=20µs 1.0 2.5 1.0 µs µs µs 2 SavantIC Semico. |
| Datasheet |
 2SC3309 Data Sheet
PDF 193.26KB |
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2SC3309 |
| Part Number | 2SC3309 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications. ABSOLUTE M. |
| Features | BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A ICBO Collector Cutoff Current VCB= 400V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE-1 DC Current Gain IC= 0.1A; VCE= 5V hFE-2 DC Current . |
2SC3309 |
| Part Number | 2SC3309 |
| Manufacturer | Toshiba |
| Title | Silicon NPN Transistor |
| Description | — SILICON NPN TRIPLE DIFFUSED TYPE SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES: . Excellent Switching Times t r =1.0/ts(Max.), tf=1.0)Us(Max.) at Ic=0.8A . High Collector Breakdown Voltage : VcEO=. |
| Features | . Excellent Switching Times t r =1.0/ts(Max.), tf=1.0)Us(Max.) at Ic=0.8A . High Collector Breakdown Voltage : VcEO= ^00V MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage SYMBOL VCBO RATING 500 UNIT 7.0 0Z.Z-LO.Z —r i / A—?m °. A* CO at C5 X< H o 2 to H I 1 L4 + C125 1 |!| 0.76-0.15 . I.lll — 2.54 ±0.25 » ii 1 1 1.2 a 5 : 1 2.54±Q25 Collector-Emitter . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3300 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SC3300 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SC3301 |
Toshiba |
Silicon NPN Transistor |
|
| 4 | 2SC3302 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SC3303 |
SeCoS |
NPN Epitaxial Planar Silicon Transistor |
|
| 6 | 2SC3303 |
Toshiba Semiconductor |
SILICON NPN TRANSISTOR |
|
| 7 | 2SC3303 |
GME |
Silicon NPN Transistor |
|
| 8 | 2SC3303 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 9 | 2SC3306 |
Toshiba Semiconductor |
NPN Transistor |
|
| 10 | 2SC3306 |
INCHANGE |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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