Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | 2SC1969 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SC1969 |
| Manufacturer | INCHANGE |
| Title | Silicon NPN Power Transistor |
| Description | ·With TO-220 packaging ·Reliable performance at higher powers ·Accurate reproduction of Input signal ·Greater dynamic range ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·High frequency inverters ·General purpose power amplifi. |
| Features | emiconductor 2SC1969 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA, IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA, IC= 0 ICBO Collector Cutoff Current VCB= 30V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Cur. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC1964 |
Mitsubishi |
RF POWER TRANSISTOR |
|
| 2 | 2SC1965 |
Mitsubishi |
NPN Power Transistor |
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| 3 | 2SC1966 |
Mitsubishi Electric Semiconductor |
NPN Transistor |
|
| 4 | 2SC1967 |
Mitsubishi Electric Semiconductor |
RF POWER TRANSISTOR |
|
| 5 | 2SC1968 |
Mitsubishi Electric Semiconductor |
NPN Transistor |
|
| 6 | 2SC1968 |
HGSemi |
Silicon NPN POWER TRANSISTOR |
|
| 7 | 2SC1968A |
Mitsubishi Electric Semiconductor |
NPN Transistor |
|
| 8 | 2SC1904 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SC1904 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SC1905 |
INCHANGE |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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