Busque con el número de pieza junto con el fabricante o la descripción
2SC1969 |
Click to view a larger image
| Part Number | 2SC1969 |
| Manufacturer | INCHANGE |
| Description | ·With TO-220 packaging ·Reliable performance at higher powers ·Accurate reproduction of Input signal ·Greater dynamic range ·Minimum Lot-to-Lot variations for robust device performance and reliable op... |
| Features |
emiconductor
2SC1969
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA, IE= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 5mA, IC= 0
ICBO
Collector Cutoff Current
VCB= 30V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE
DC Current Gain
IC= 10mA; VCE= 12V
MIN TYP. MAX UNIT
60
V
25
V
5
V
0.1 mA
0.1 mA
10
180
hFE Classifications X A B 10-25 20-45 35-70 C D 55-110 90-180 NOTICE： ISC reserves the rights t... |
| Document |
 2SC1969 Data Sheet
PDF 196.29KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC1964 |
Mitsubishi |
RF POWER TRANSISTOR |
|
| 2 | 2SC1965 |
Mitsubishi |
NPN Power Transistor |
|
| 3 | 2SC1966 |
Mitsubishi Electric Semiconductor |
NPN Transistor |
|
| 4 | 2SC1967 |
Mitsubishi Electric Semiconductor |
RF POWER TRANSISTOR |
|
| 5 | 2SC1968 |
Mitsubishi Electric Semiconductor |
NPN Transistor |
|
| 6 | 2SC1968 |
HGSemi |
Silicon NPN POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
|