2SC1904 Datasheet. existencias, precio

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2SC1904 SILICON POWER TRANSISTOR

2SC1904


2SC1904
Part Number 2SC1904
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2SC1904

INCHANGE
2SC1904
Part Number 2SC1904
Manufacturer INCHANGE
Title NPN Transistor
Description ·Low collector to emitter saturation voltage ·Output of 1W can be obtained by a complementary with 2SA899 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High frequency power amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SY.
Features IC= 10mA; IB= 1mA VBE(sat) Base-Emitter Saturation Voltage IC= 10mA; IB= 1mA ICBO Collector Cutoff Current VCB= 140V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC= 10mA ; VCE= 5V fT Current-Gain—Bandwidth Product IC= 10mA ; VCE= 5V MIN TYP. MAX UNIT 0.5 V 1.0 V 1.0 μA 1.0 μA 35 500 70 MHz NOTICE: ISC reserves the rights to make changes of the co.

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