Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | 2SC1907 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SC1907 |
| Manufacturer | Hitachi Semiconductor |
| Title | Silicon NPN Transistor |
| Description | 2SC1907 Silicon NPN Epitaxial Planar Application UHF TV Tuner, Local oscillator Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1907 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter curre. |
| Features | tance Gain bandwidth product Base time constant Oscillation output power V(BR)EBO I CBO hFE VCE(sat) Cob fT rbb’ Pout CC V pF MHz ps mW I C = 20 mA, IB = 4 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IC = 10 mA VCB = 10 V, IC = 10 mA, f = 31.8 MHz VCB = 10 V, IC = 10 mA, f = 930 MHz — — 2 2SC1907 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 300 Collector Current IC. |
| Part Number | 2SC1907 |
| Manufacturer | Renesas |
| Title | Silicon NPN Transistor |
| Description | 2SC1907 Silicon NPN Epitaxial Planar Application UHF TV Tuner, Local oscillator Outline RENESAS Package code: PRSS0003DA-C (Package name: TO-92 (2)) REJ03G0694-0200 (Previous ADE-208-1059) Rev.2.00 Aug.10.2005 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings Item Collector to base volta. |
| Features |
CB = 10 V, IE = 0
DC current transfer ratio
hFE 40 — —
VCE = 10 V, IC = 10 mA
Collector to emitter saturation voltage
VCE(sat)
—
0.2 1.0
V IC = 20 mA, IB = 4 mA
Collector output capacitance
Cob — 1.0 2.0 pF VCB = 10 V, IE = 0, f = 1 MHz
Gain bandwidth product
fT 900 1100 — MHz VCE = 10 V, IC = 10 mA
Base time constant
rbb’ • CC — 10 25 ps VCB = 10 V, IC = 10 mA, f = 31.8 MHz Os. |
| Part Number | 2SC1907 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Low Noise ·High Gain Bandwidth Product ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for VHF TV tuner and local oscillator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collec. |
| Features | )CEO Collector-Emitter Breakdown Voltage IC= 3mA ; RBE= ∞ 19 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10μA ; IC= 0 2 V VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA ; IB= 4mA 1.0 V ICBO Collector Cutoff Current VCB= 10V; IE= 0 0.5 μA hFE DC Current Gain IC= 10mA ; VCE= 10V 40 fT Current-Gain—Bandwidth Product IC= 10mA ; VCE= 10V 900 1100 MHz COB Output Capacit. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC1904 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SC1904 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SC1905 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC1905 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SC1906 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SC1906 |
INCHANGE |
NPN Transistor |
|
| 7 | 2SC1908 |
ETC |
NPN Transistor |
|
| 8 | 2SC1913 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SC1913 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SC1913A |
SavantIC |
SILICON POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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