Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | 2SC1913 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SC1913 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= 150(V)(Min.) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency high power driver ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCB. |
| Features | B= 30mA VBE(sat) Base-Emitter Saturation Voltage IC= 500mA; IB= 30mA ICBO Collector Cutoff Current VCB= 120V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE-1 DC Current Gain IC= 150mA; VCE= 10V hFE-2 DC Current Gain IC= 500mA; VCE= 5V fT Current-Gain—Bandwidth Product IE= 50mA; VCE= 10V MIN TYP. MAX UNIT 150 V 1.0 V 1.5 V 1 uA 1 uA 65 330 50 120 MHz hFE-1. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC1913A |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | 2SC1904 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SC1904 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SC1905 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SC1905 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SC1906 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 7 | 2SC1906 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SC1907 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 9 | 2SC1907 |
INCHANGE |
NPN Transistor |
|
| 10 | 2SC1907 |
Renesas |
Silicon NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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