Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
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2SC1162 |
| Part Number | 2SC1162 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Collector Current IC= 2.5A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 35V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Complement to Type 2SA715 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequenc. |
| Features | R CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Vltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 1.5A ; VCE= 2V ICBO Collector Cutoff Current VCB= 35V; IE= 0 hFE-1 DC Current Gain IC= 0.5A ; VCE. |
2SC1162 |
| Part Number | 2SC1162 |
| Manufacturer | LGE |
| Title | NPN Transistor |
| Description | 2SC1162(NPN) TO-126 Transistor 1. EMITTER 2. COLLECOTR TO-126 7.400 7.800 2.500 1.100 2.900 1.500 3 2 1 Features Low frequency power amplifier 3. BASE 3.000 3.200 10.60 0 11.00 0 15.30 0 15.70 0 3.900 4.100 2.100 2.300 1.170 1.370 0.000 0.300 MAXIMUM RATINGS (TA=25℃ unless otherwise noted). |
| Features | Low frequency power amplifier 3. BASE 3.000 3.200 10.60 0 11.00 0 15.30 0 15.70 0 3.900 4.100 2.100 2.300 1.170 1.370 0.000 0.300 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Emitter Voltage 35 V VCEO Collector-Emitter Voltage 35 V VEBO Emitter-Base Voltage 5V IC Collector Current -Continuous 2.5 A Pc Collector Power Dissipation 0. |
2SC1162 |
| Part Number | 2SC1162 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-126 package ·Complement to type 2SA715 APPLICATIONS ·For low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute Maximun Ratings (Ta=25? ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emi. |
| Features | n voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=10mA IB=0 IC=1mA ;IE=0 IE=1mA; IC=0 IC=2.0A; IB=0.2A(Pulse test) IC=1.5A ; VCE=2V(Pulse test) VCB=35V; IE=0 VEB=3V; IC=0 IC=0.5A ; VCE=2V IC=1.5A ; VCE=2V(Pulse test) IC=0.2A ; VCE=. |
2SC1162 |
| Part Number | 2SC1162 |
| Manufacturer | SeCoS |
| Title | NPN Transistor |
| Description | Elektronische Bauelemente 2SC1162 2.5A , 35V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low frequency power amplifier TO-126 CLASSIFICATION OF hFE (1) Product-Rank 2SC1162-B 2SC1162-C Range 60~120 100~200 2SC1162-D 16. |
| Features |
Low frequency power amplifier TO-126 CLASSIFICATION OF hFE (1) Product-Rank 2SC1162-B 2SC1162-C Range 60~120 100~200 2SC1162-D 160~320 Collector Base Emitter Emitter Collector Base A E F N L M K B H J C D G REF. A B C D E F G Millimeter Min. Max. 7.40 7.80 2.50 2.90 10.60 11.00 15.30 15.70 3.70 3.90 3.90 4.10 2.29 TYP. REF. H J K L M N Millimeter Min. Max. 1.10 1.50 0. |
2SC1162 |
| Part Number | 2SC1162 |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon NPN transistor |
| Description | TO-126F NPN 。Silicon NPN transistor in a TO-126F Plastic Package. / Features 2SA715 。 Complementary pair with 2SA715. / Applications 。 Low frequency power amplifier. / Equivalent Circuit / Pinning 12 3 PIN1：Emitter PIN 2：Collector PIN 3：Base / hFE Classifications & Marking hFE. |
| Features | 2SA715 。 Complementary pair with 2SA715. / Applications 。 Low frequency power amplifier. / Equivalent Circuit / Pinning 12 3 PIN1：Emitter PIN 2：Collector PIN 3：Base / hFE Classifications & Marking hFE Classifications Symbol hFE Range B 60～120 C 100～200 D 160～320 http://www.fsbrec.com 1/6 2SC1162 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Bas. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC1161 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | 2SC1161 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SC1163 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SC1163 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SC1164 |
Toshiba |
SILICON NPN TRANSISTOR |
|
| 6 | 2SC1165 |
Toshiba |
Silicon NPN epitaxial planer type Transistor |
|
| 7 | 2SC1166 |
ETC |
Silicon NPN Transistor |
|
| 8 | 2SC1169 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 9 | 2SC1102 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SC1102 |
INCHANGE |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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