Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SC1163 |
| Part Number | 2SC1163 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Collector Current IC= 0.1A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Good Linearity of hFE ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for low frequency power amplifier applica. |
| Features | oltage IC= 1mA ; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Vltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA; IB= 5mA VBE(sat) Base-Emitter Saturation Voltage IC= 50mA; IB= 5mA ICBO Collector Cutoff Current VCB= 300V; IE= 0 hFE DC Current Gain IC= 50mA ; VCE= 10V MIN TYP. MAX UNIT 300 V 300 V . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC1161 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | 2SC1161 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SC1162 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SC1162 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SC1162 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SC1162 |
SeCoS |
NPN Transistor |
|
| 7 | 2SC1162 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 8 | 2SC1162 |
LGE |
NPN Transistor |
|
| 9 | 2SC1164 |
Toshiba |
SILICON NPN TRANSISTOR |
|
| 10 | 2SC1165 |
Toshiba |
Silicon NPN epitaxial planer type Transistor |
|
Desde 2024. D4U Semiconductor.
|