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2SC1162 |
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| Part Number | 2SC1162 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SC1162 Silicon NPN Epitaxial Application Low frequency power amplifier complementary pair with 2SA715 Outline TO-126 MOD 1 1. Emitter 2. Collector 3. Base 2 3 Absolute Maximum Ratings (Ta = 25... |
| Features |
current DC current transfer ratio V(BR)EBO I CBO hFE* hFE Base to emitter voltage Collector to emitter saturation voltage Gain bandwidth product Note: B 60 to 120 VBE VCE(sat) fT
60 20 — — —
V V MHz
VCE = 2 V, IC = 1.5 A (pulse test) I C = 2 A, IB = 0.2 A (pulse test) VCE = 2 V, IC = 0.2 A
1. The 2SC1162 is grouped by h FE as follows. C 100 to 200 D 160 to 320
Maximum Collector Dissipation Curve 0.8 Collector power dissipation PC (W) 0.75 Collector current IC (A) 0.6 5
Area of Safe Operation IC(max)(DC Operation) 2
PC = 10
TC = 25°C
1.0 0.5
W
0.4
0.2
0.2 0.1 0 50 100 150 Ambient t... |
| Document |
 2SC1162 Data Sheet
PDF 29.63KB |
Desde 2024. D4U Semiconductor.
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