Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SB616 |
| Part Number | 2SB616 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector-Emitter BreakdownVoltage- : V(BR)CEO= -100V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0(Max.) @IC= -2A ·With TO-3PN package ·Complement to Type 2SD586 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplif. |
| Features | tor-Emitter Breakdown Voltage IC= -30mA; RBE= ∞ -100 V V(BR)CBO Collector-Base breakdown voltage IC=-1mA; IE= 0 -100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A -1.5 V VBE(on) Base-Emitter On Voltage IC=- 1A; VCE=-5V -1.5 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 -100 μA IEBO Emitter C. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB611 |
INCHANGE |
Silicon PNP Power Transistor |
|
| 2 | 2SB612 |
INCHANGE |
PNP Transistor |
|
| 3 | 2SB613 |
INCHANGE |
PNP Transistor |
|
| 4 | 2SB617 |
ETC |
Silicon Triple Diffused Transistor |
|
| 5 | 2SB617A |
ETC |
Silicon Triple Diffused Transistor |
|
| 6 | 2SB600 |
INCHANGE |
PNP Transistor |
|
| 7 | 2SB600 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SB601 |
INCHANGE |
PNP Transistor |
|
| 9 | 2SB601 |
NEC |
PNP Transistor |
|
| 10 | 2SB601 |
SavantIC |
SILICON POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
|