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2SB616 |
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| Part Number | 2SB616 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter BreakdownVoltage- : V(BR)CEO= -100V(Min.) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0(Max.) @IC= -2A ·With TO-3PN package ·Complement to Type 2SD586 ·Minimum Lot-to-Lot vari... |
| Features |
tor-Emitter Breakdown Voltage IC= -30mA; RBE= ∞
-100
V
V(BR)CBO Collector-Base breakdown voltage IC=-1mA; IE= 0
-100
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA; IC= 0
-5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A
-1.5
V
VBE(on) Base-Emitter On Voltage
IC=- 1A; VCE=-5V
-1.5
V
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
-100 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
-100 μA
hFE
DC Current Gain
IC= -1A ; VCE= -5V
60
fT
Current-Gain—Bandwidth Product IC=-1A ; VCE= -5V
15
MHz
COB
Output Capacitance
IE= 0 ; VCB= -10V,ftest= 1... |
| Document |
 2SB616 Data Sheet
PDF 185.77KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB611 |
INCHANGE |
Silicon PNP Power Transistor |
|
| 2 | 2SB612 |
INCHANGE |
PNP Transistor |
|
| 3 | 2SB613 |
INCHANGE |
PNP Transistor |
|
| 4 | 2SB616 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SB617 |
ETC |
Silicon Triple Diffused Transistor |
|
| 6 | 2SB617A |
ETC |
Silicon Triple Diffused Transistor |
|
Desde 2024. D4U Semiconductor.
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