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| Part Number | 2N6493 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2N6493 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High DC current gain : hFE= 500(Min)@ IC= 3A ·With TO-3 package ·Low collector saturation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power amplifier and low frequency swithing applications. . |
| Features | TER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC=10A; IB= 0.1A VBE(sat) Base-Emitter Saturation Voltage IC=10A; IB= 0.1A VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 4V IEBO Emitter Cutoff Current VEB= 5V; IC= 0 ICEO Collector Cutoff Current VCE= 70V; IB=0 ICBO Collector Base Cutoff Current VCB=100V; IE. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N6490 |
STMicroelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS |
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| 2 | 2N6490 |
ON Semiconductor |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 3 | 2N6490 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 4 | 2N6490 |
CDIL |
PNP PLASTIC POWER TRANSISTORS |
|
| 5 | 2N6490 |
Central Semiconductor |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 6 | 2N6491 |
ON Semiconductor |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 7 | 2N6491 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 8 | 2N6491 |
CDIL |
PNP PLASTIC POWER TRANSISTORS |
|
| 9 | 2N6491 |
Central Semiconductor |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 10 | 2N6492 |
INCHANGE |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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