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2N6493 |
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| Part Number | 2N6493 |
| Manufacturer | INCHANGE |
| Description | ·High DC current gain : hFE= 500(Min)@ IC= 3A ·With TO-3 package ·Low collector saturation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation A... |
| Features |
TER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC=10A; IB= 0.1A
VBE(sat) Base-Emitter Saturation Voltage
IC=10A; IB= 0.1A
VBE(on) Base-Emitter On Voltage
IC= 3A ; VCE= 4V
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
ICEO
Collector Cutoff Current
VCE= 70V; IB=0
ICBO
Collector Base Cutoff Current
VCB=100V; IE= 0
hFE-1
DC Current Gain
IC= 3A; VCE= 4V
hFE-2
DC Current Gain
IC= 15A; VCE= 4V
2N6493
MIN TYP MAX UNIT
70
V
3.0
V
4.0
V
2.8
V
3
mA
1
mA
0.5
mA
500
100
NOTICE： ISC reserves t... |
| Document |
 2N6493 Data Sheet
PDF 183.54KB |
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