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| Part Number | 2N6490 |
| Distributor | Stock | Price | Buy |
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| Part Number | 2N6490 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistors |
| Description | With TO-220 package Excellent safe operating area Complement to type 2N6486 2N6487 2N6488 respectively APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and sy. |
| Features | P Power Transistors Product Specification 2N6489 2N6490 2N6491 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage 2N6489 2N6490 IC=-0.2A ;IB=0 2N6491 VCEsat-1 Collector-emitter saturation voltage IC=-5A;IB=-0.5A VCEsat-2 Collector-emitter saturation voltage IC=-15A;IB=-5A VBE-1 Base-emitter on voltage IC=-5A ; VC. |
| Part Number | 2N6490 |
| Manufacturer | STMicroelectronics |
| Title | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Description | The 2N6487 and 2N6488 are silicon epitaxial-base NPN transistors in Jedec TO-220 plastic package. They are inteded for use in power linear and low frequency switching applications. The 2N6487 complementary type is 2N6490. TO-220 3 1 2 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Par. |
| Features | TA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.67 70 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEX Parameter Collector Cut-off Current (V BE = -1.5V) Test Conditions for 2N6487/2N6490 for 2N6488 T c = 150 o C for 2N6487/2N6490 for 2N6488 for 2N6487/2N6490 for 2N6488 for 2N6487/2N6490 for 2N64. |
| Part Number | 2N6490 |
| Manufacturer | ON Semiconductor |
| Title | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Description | 2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features • High DC Current Gain • High Current Gain − Bandwidth Product • TO−220 Compact Package • These Devices are. |
| Features |
• High DC Current Gain • High Current Gain − Bandwidth Product • TO−220 Compact Package • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector−Emitter Voltage 2N6487, 2N6490 2N6488, 2N6491 VCEO 60 80 Vdc Collector−Base Voltage 2N6487, 2N6490 2N6488, 2N6491 VCB Vdc 70 90 Emitter−Base Voltage Collector Current − Continuous Base Curr. |
| Part Number | 2N6490 |
| Manufacturer | Central Semiconductor |
| Title | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Description | The CENTRAL SEMICONDUCTOR 2N6486, 2N6489 series types are complementary silicon power transistors designed for general purpose switching and amplifier applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collec. |
| Features | . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N6491 |
ON Semiconductor |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 2 | 2N6491 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 3 | 2N6491 |
CDIL |
PNP PLASTIC POWER TRANSISTORS |
|
| 4 | 2N6491 |
Central Semiconductor |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 5 | 2N6492 |
INCHANGE |
NPN Transistor |
|
| 6 | 2N6492 |
SavantIC |
Silicon Power Transistor |
|
| 7 | 2N6493 |
INCHANGE |
NPN Transistor |
|
| 8 | 2N6493 |
SavantIC |
Silicon Power Transistor |
|
| 9 | 2N6494 |
INCHANGE |
NPN Transistor |
|
| 10 | 2N6494 |
SavantIC |
Silicon Power Transistor |
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Desde 2024. D4U Semiconductor.
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