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| Part Number | 2N6383 |
| Distributor | Stock | Price | Buy |
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| Part Number | 2N6383 |
| Manufacturer | SavantIC |
| Title | (2N6383 - 2N6385) Silicon Power Transistor |
| Description | ·With TO-3 package ·Complement to type 2N6648/6649/6650 ·DARLINGTON ·High DC current gain APPLICATIONS ·Designed for low and medium frequency power application such as power switching audio amplifer ,hammer drivers and shunt and series regulators PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION . |
| Features | ase VALUE 1.75 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2N6383 2N6384 2N6385 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6383 VCEO(SUS) Collector-emitter sustaining voltage 2N6384 2N6385 VCEsat-1 VCEsat-2 VBE-1 VBE-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage B. |
| Part Number | 2N6383 |
| Manufacturer | Central Semiconductor |
| Title | NPN Transistor |
| Description | The CENTRAL SEMICONDUCTOR 2N3683 SERIES types are NPN Silicon Power Darlington Transistors designed for power amplifier applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Col. |
| Features | 84) IC=200mA (2N6385) IC=200mA, RBE=100Ω (2N6383) IC=200mA, RBE=100Ω (2N6384) IC=200mA, RBE=100Ω (2N6385) IC=200mA, VBE(off)=1.5V (2N6383) IC=200mA, VBE(off)=1.5V (2N6384) IC=200mA, VBE(off)=1.5V (2N6385) 40 60 80 40 60 80 40 60 80 MAX 300 3.0 1.0 10 UNITS μA mA mA mA V V V V V V V V V R1 (28-August 2008) CentralTM Semiconductor Corp. 2N6383 2N6384 2N6385 NPN SILICON POWER DARLINGTON TRANSIS. |
| Part Number | 2N6383 |
| Manufacturer | TAITRON |
| Title | Darlington Power Transistor |
| Description | 2N6383 2N6648 2N6384 2N6649 VCBO Collector-Base Voltage 40 60 VCEO Collector-Emitter Voltage 40 60 VEBO Emitter-Base Voltage 5 Collector Current (Continuous) IC Collector Current (Peak) 10 15 IB PD RθJC TJ, TSTG Base Current Total Power Dissipation at TC=25°C Derate above TA=25°C The. |
| Features |
• High Gain Dalington Performance • DC Current Gain hFE = 3000(Typ) @ IC = 5.0A • True Complementary Specifications • RoHS Compliant Mechanical Data Case: Terminals: Weight: TO-3, Metal Can Package Solderable per MIL-STD-750 20 grams (approx) Maximum Ratings (TC=25ºC unless noted otherwise) Symbol Description 2N6383 2N6648 2N6384 2N6649 VCBO Collector-Base Voltage 40 60 VCEO Collector. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N6380 |
ETC |
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| 2 | 2N6380 |
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| 3 | 2N6381 |
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| 4 | 2N6381 |
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| 5 | 2N6382 |
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| 6 | 2N6382 |
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| 7 | 2N6384 |
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| 8 | 2N6384 |
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(2N6383 - 2N6385) Silicon Power Transistor |
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| 9 | 2N6384 |
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| 10 | 2N6384 |
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Desde 2024. D4U Semiconductor.
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