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2N6384 (2N6383 - 2N6385) Silicon Power Transistor


2N6384
Part Number 2N6384
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Microsemi Corporation
2N6384
Part Number 2N6384
Manufacturer Microsemi Corporation
Title NPN DARLINGTON POWER SILICON TRANSISTOR
Description TECHNICAL DATA NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/523 Devices 2N6383 2N6384 2N6385 Qualified Level JAN, JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation .
Features 2N6385 40 60 80 40 60 80 1.0 1.0 1.0 Vdc V(BR)CEO Collector-Emitter Breakdown Voltage IC = 200 mAdc, RBB = 100 Ω V(BR)CER Vdc Collector-Base Cutoff Current VCE = 40 Vdc VCE = 60 Vdc VCE = 80 Vdc ICBO mAdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N6383, 2N6384, 2N6385, JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Charac.
Central Semiconductor
2N6384
Part Number 2N6384
Manufacturer Central Semiconductor
Title NPN Transistor
Description The CENTRAL SEMICONDUCTOR 2N3683 SERIES types are NPN Silicon Power Darlington Transistors designed for power amplifier applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Col.
Features 84) IC=200mA (2N6385) IC=200mA, RBE=100Ω (2N6383) IC=200mA, RBE=100Ω (2N6384) IC=200mA, RBE=100Ω (2N6385) IC=200mA, VBE(off)=1.5V (2N6383) IC=200mA, VBE(off)=1.5V (2N6384) IC=200mA, VBE(off)=1.5V (2N6385) 40 60 80 40 60 80 40 60 80 MAX 300 3.0 1.0 10 UNITS μA mA mA mA V V V V V V V V V R1 (28-August 2008) CentralTM Semiconductor Corp. 2N6383 2N6384 2N6385 NPN SILICON POWER DARLINGTON TRANSIS.
TAITRON
2N6384
Part Number 2N6384
Manufacturer TAITRON
Title Darlington Power Transistor
Description 2N6383 2N6648 2N6384 2N6649 VCBO Collector-Base Voltage 40 60 VCEO Collector-Emitter Voltage 40 60 VEBO Emitter-Base Voltage 5 Collector Current (Continuous) IC Collector Current (Peak) 10 15 IB PD RθJC TJ, TSTG Base Current Total Power Dissipation at TC=25°C Derate above TA=25°C The.
Features
• High Gain Dalington Performance
• DC Current Gain hFE = 3000(Typ) @ IC = 5.0A
• True Complementary Specifications
• RoHS Compliant Mechanical Data Case: Terminals: Weight: TO-3, Metal Can Package Solderable per MIL-STD-750 20 grams (approx) Maximum Ratings (TC=25ºC unless noted otherwise) Symbol Description 2N6383 2N6648 2N6384 2N6649 VCBO Collector-Base Voltage 40 60 VCEO Collector.

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