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2N6383 |
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| Part Number | 2N6383 |
| Manufacturer | Microsemi (https://www.microsemi.com/) Corporation |
| Description | TECHNICAL DATA NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/523 Devices 2N6383 2N6384 2N6385 Qualified Level JAN, JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage... |
| Features |
2N6385 40 60 80 40 60 80 1.0 1.0 1.0 Vdc
V(BR)CEO
Collector-Emitter Breakdown Voltage IC = 200 mAdc, RBB = 100 Ω
V(BR)CER
Vdc
Collector-Base Cutoff Current VCE = 40 Vdc VCE = 60 Vdc VCE = 80 Vdc
ICBO
mAdc
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120101 Page 1 of 2
2N6383, 2N6384, 2N6385, JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Emitter-Base Cutoff Current VEB = 5.0 Vdc Collector-Emitter Cutoff Current VCE = 40 Vdc VCE = 60 Vdc VCE = 80 Vdc Collector-Emitter Cutoff Current VCE = 40 Vdc, VBE = 1.5 Vdc VCE = 60 Vdc, V... |
| Document |
 2N6383 Data Sheet
PDF 55.72KB |
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