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2N4119A |
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| Part Number | 2N4119A |
| Manufacturer | Vishay (https://www.vishay.com/) Siliconix |
| Description | The 2N/PN/SST4117A series of n-channel JFETs provide ultra-high input impedance. These devices are specified with a 1-pA limit and typically operate at 0.2 pA. This makes them perfect choices for use as high-impedance sensitive front-end amplifiers. The hermetically sealed TO-206AF package allows full military processing per MIL-S-19500 (see Military Informa. |
| Features | D D D D Ultra-Low Leakage: 0.2 pA Very Low Current/Voltage Operation Ultrahigh Input Impedance Low Noise BENEFITS D Insignificant Signal Loss/Error Voltage with High-Impedance Source D Low Power Consumption (Battery) D Maximum Signal Output, Low Noise D High Sensitivity to Low-Level Signals APPLICATIONS D High-Impedance Transducer Amplifiers D Smoke Detector Input D Infrared Detector Amplifier D Precision Test Equipment DESCRIPTION The 2N/PN/SST4117A series of n-channel JFETs provide ultra-high input impedance. These devices are specified with a 1-pA limit and typically operate at 0.2 pA. T. |
| Datasheet |
 2N4119A Data Sheet
PDF 61.72KB |
| Distributor | Stock | Price | Buy |
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2N4119A |
| Part Number | 2N4119A |
| Manufacturer | InterFET |
| Title | N-Channel JFET |
| Description | The -50V InterFET 2N4117/A, 2N4118/A, and 2N4119/A JFET’s are targeted for ultra high input impedance applications. Gate leakages are typically 120fA at room temperatures. Proprietary InterFET processes yield exceptionally high radiation tolerance. Parts can be connected for femtoampere diode appli. |
| Features |
• InterFET N0001H Geometry • Low gate leakage: 120fA typical @20V • Low CISS: 1.8pF typical • Typical BVGSS: -60V • High radiation tolerance • RoHS, REACH, CMR compliant • Custom test and binning options available • SMT, TH, and bare die package options • Edge case SPICE modeling: InterFET SPICE TO-72 Bottom View Gate 3 S/D 2 4 Case 1 S/D SOT23 Top View Industry Standard Crosses S/D 1 • SST. |
2N4119A |
| Part Number | 2N4119A |
| Manufacturer | Calogic LLC |
| Title | N-Channel JFET General Purpose Amplifier |
| Description | N-Channel JFET General Purpose Amplifier CORPORATION 2N4117 – 2N4119 / 2N4117A – 2N4119A PN4117 – PN4119 / PN4117A – PN4119A / SST4117 – SST4119 PIN CONFIGURATION FEATURES Leakage • Low • Low Capacitance TO - 92 TO-72 ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Gate-Source or Gate. |
| Features |
Leakage • Low • Low Capacitance TO - 92 TO-72 ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC Operating Temperature Range . . . . . . . . . . . -55oC to +175oC Lea. |
2N4119A |
| Part Number | 2N4119A |
| Manufacturer | Micross |
| Title | Ultra-High Input Impedance N-Channel JFET |
| Description | 2N4119A N-CHANNEL JFET Linear Systems replaces discontinued Siliconix 2N4119A The 2N4119A is an Ultra-High Input Impedance N-Channel JFET The 2N4119A provides ultra-high input impedance. The device is specified with a 1-pA limit and typically operates at 0.2 pA. The part is ideal for use as a highi. |
| Features | DIRECT REPLACEMENT FOR SILICONIX 2N4119A LOW POWER MINIMUM CIRCUIT LOADING ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation MAXIMUM CURRENT Gate Current (Note 1) MAXIMUM VOLTAGES Gate to Drain or Gate to Source (Note 2) IDSS<90 µA IGSS<1 pA w. |
2N4119A |
| Part Number | 2N4119A |
| Manufacturer | Motorola |
| Title | JFET |
| Description | 2N4117.A 2N4118.A 2N4119.A MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate Current Total Device Dissipation |
| Features | . |
2N4119A |
| Part Number | 2N4119A |
| Manufacturer | Solitron Devices |
| Title | N-Channel JFET |
| Description | The -50V 2N4117/A, 2N4118/A, and 2N4119/A JFET’s are targeted for ultra high input impedance applications for mid to high frequency designs. Gate leakages are typically 1pA at room temperatures. The 2N4117 has a cutoff voltage of less than 1.8V ideal for lowlevel power supplies. The TO-72 package is. |
| Features | LOW LEAKAGE: 0.25 PA TYPICAL LOW INPUT CAPACITANCE: 2.0 PF TYPICAL HIGH INPUT IMPEDANCE Gate 3 DESCRIPTION The -50V 2N4117/A, 2N4118/A, and 2N4119/A JFET’s are targeted for ultra high input impedance applications for mid to high frequency designs. Gate leakages are typically 1pA at room temperatures. The 2N4117 has a cutoff voltage of less than 1.8V ideal for lowlevel power supplies. The TO-72 . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N4119 |
Calogic LLC |
N-Channel JFET General Purpose Amplifier |
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| 2 | 2N4119 |
InterFET |
N-Channel JFET |
|
| 3 | 2N4119 |
Motorola |
JFET |
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| 4 | 2N4119 |
Solitron Devices |
N-Channel JFET |
|
| 5 | 2N4111 |
INCHANGE |
NPN Transistor |
|
| 6 | 2N4111 |
Seme LAB |
Bipolar NPN Device |
|
| 7 | 2N4112 |
Seme LAB |
Bipolar NPN Device |
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| 8 | 2N4112 |
INCHANGE |
NPN Transistor |
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| 9 | 2N4113 |
INCHANGE |
NPN Transistor |
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| 10 | 2N4113 |
Seme LAB |
Bipolar NPN Device |
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Desde 2024. D4U Semiconductor.
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