Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
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2N3741A |
| Part Number | 2N3741A |
| Manufacturer | Microsemi Corporation |
| Title | Medium Power PNP Transistors |
| Description | These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial,. |
| Features |
• • • • • Low Saturation Voltage: 0.6 VCE(sat) @ IC = 1.0 Amp High Gain Characteristics: hFE @ IC = 250 mA: 30-100 Excellent Safe Area Limits Low Collector Cutoff Current: 100 nA (Max) 2N3741A Medium Power PNP Transistors DESCRIPTION: These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, freq. |
2N3741A |
| Part Number | 2N3741A |
| Manufacturer | Central Semiconductor Corp |
| Title | PNP SILICON POWER TRANSISTORS |
| Description | The CENTRAL SEMICONDUCTOR 2N3740 series devices are silicon PNP power transistors manufactured by the epitaxial base process designed for power amplifier and medium speed switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitte. |
| Features | , TC=150°C (2N3740A) VCE=60V, VBE=1.5V, TC=150°C (2N3741) VCE=60V, VBE=1.5V, TC=150°C (2N3741A) ICBO VCB=Rated VCBO (2N3740, 2N3741) ICBO ICEO ICEO VCB=Rated VCBO (2N3740A, 2N3741A) VCE=40V (2N3740) VCE=40V (2N3740A) ICEO VCE=60V (2N3741) ICEO IEBO IEBO VCE=60V (2N3741A) VEB=7.0V (2N3740, 2N3741) VEB=7.0V (2N3740A, 2N3741A) BVCEO IC=100mA (2N3740, 2N3740A) 60 BVCEO IC=100mA (2N3741, 2N3. |
2N3741A |
| Part Number | 2N3741A |
| Manufacturer | INCHANGE |
| Title | Silicon PNP Power Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : VCEO=-80V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VCBO Collector-Base Voltage -80 V. |
| Features | ge IC= -1A; IB=-0.125A VBE(on) Base-Emitter On Voltage IC=-0.25A; VCE= -1V hFE-1 DC Current Gain IC=-100mA; VCE=-1V hFE-2 DC Current Gain IC=-250mA; VCE= -1V hFE-3 DC Current Gain IC=-500mA; VCE= -1V hFE-4 DC Current Gain IC=-1A; VCE= -1V 2N3741A MIN TYP. MAX UNIT -80 V -0.1 uA -1 uA -0.6 V -1 V 40 30 100 20 10 NOTICE： ISC reserves the rights to make changes of the . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N3741 |
VPT |
PNP Power Silicon Transistor |
|
| 2 | 2N3741 |
Microsemi Corporation |
Medium Power PNP Transistors |
|
| 3 | 2N3741 |
Central Semiconductor Corp |
PNP SILICON POWER TRANSISTORS |
|
| 4 | 2N3741 |
Motorola |
MEDIUM-POWER PNP TRANSISTORS |
|
| 5 | 2N3741 |
Seme LAB |
Bipolar PNP Device |
|
| 6 | 2N3741 |
Aeroflex |
PNP Power Silicon Transistor |
|
| 7 | 2N3741 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 8 | 2N3741R |
Seme LAB |
POWER TRANSISTORS |
|
| 9 | 2N3741R |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 10 | 2N3740 |
VPT |
PNP Power Silicon Transistor |
|
Desde 2024. D4U Semiconductor.
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