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2N3741A |
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| Part Number | 2N3741A |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : VCEO=-80V(Min) ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS ·Power amplifier and switching applications ABS... |
| Features |
ge IC= -1A; IB=-0.125A
VBE(on)
Base-Emitter On Voltage
IC=-0.25A; VCE= -1V
hFE-1
DC Current Gain
IC=-100mA; VCE=-1V
hFE-2
DC Current Gain
IC=-250mA; VCE= -1V
hFE-3
DC Current Gain
IC=-500mA; VCE= -1V
hFE-4
DC Current Gain
IC=-1A; VCE= -1V
2N3741A
MIN TYP. MAX UNIT
-80
V
-0.1 uA
-1
uA
-0.6
V
-1
V
40
30
100
20
10
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage i... |
| Document |
 2N3741A Data Sheet
PDF 217.51KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N3741 |
VPT |
PNP Power Silicon Transistor |
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| 2 | 2N3741 |
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| 3 | 2N3741 |
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| 4 | 2N3741 |
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MEDIUM-POWER PNP TRANSISTORS |
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| 5 | 2N3741 |
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| 6 | 2N3741 |
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Desde 2024. D4U Semiconductor.
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