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| Part Number | 1SS321 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 1SS321 |
| Manufacturer | Guangdong Kexin Industrial |
| Title | LOW VOLTAGE HIGH SPEED SWITCHING |
| Description | www.DataSheet.co.kr SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS321 Diodes SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 Low forward voltage: Low reverse current: VF = 0.42 V(Typ) IR =500 nA(Max) 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Features 2 0.55 0.4 3 +0.05 0.1-0.01 . |
| Features | 2 0.55 0.4 3 +0.05 0.1-0.01 Small packag : SC-59(SOT-23MOD) +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute M axim um R atings Ta = 25 Param eter M axim um (Peak) reverse voltage R everse voltage M axim um (Peak) forward current Average forward current Surge current (t = 10 m s) Power dissipation Junction tem perature Storage tem perature range N ote U nit R ating.Total rating = U nit. |
| Part Number | 1SS321 |
| Manufacturer | Toshiba Semiconductor |
| Title | Silicon Epitaxial Schottky Barrier Type Diode |
| Description | TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS321 Low-Voltage High-Speed Switching AEC-Q101 Qualified (Note1) Low forward voltage: VF(2) = 0.42 V (typ.) Low reverse current: IR = 500 nA (max) Small package: SC-59 Note1: For detail information, please contact to our sales. 1SS321 . |
| Features | (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Unit rating. Total rating = unit rating × 1.5. . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 1SS322 |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Type Diode |
|
| 2 | 1SS322 |
Kexin |
LOW VOLTAGE HIGH SPEED SWITCHING DIODES |
|
| 3 | 1SS300 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |
|
| 4 | 1SS300 |
Kexin |
ULTRA HIGH SPEED SWITCHING APPLICATIONS DIODES |
|
| 5 | 1SS301 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |
|
| 6 | 1SS301 |
XIN SEMICONDUCTOR |
SUPER HIGH SPEED SWITCHING DIODE |
|
| 7 | 1SS301 |
Kexin |
ULTRA HIGH SPEED SWITCHING APPLICATIONS DIODES |
|
| 8 | 1SS302 |
Toshiba Semiconductor |
Diode |
|
| 9 | 1SS302 |
Guangdong Kexin Industrial |
ULTRA HIGH SPEED SWITCHING APPLICATIONS |
|
| 10 | 1SS302A |
Toshiba |
Silicon Epitaxial Planar Switching Diodes |
|
Desde 2024. D4U Semiconductor.
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