1SS321 |
Part Number | 1SS321 |
Manufacturer | SEMTECH ELECTRONICS |
Description | www.DataSheet.co.kr 1SS321 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For low voltage high speed switching application 3 Features • Low forward voltage • Low reverse current 1 2 Marking Code: "ZC" SO... |
Features |
• Low forward voltage • Low reverse current 1 2 Marking Code: "ZC" SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Maximum Peak Reverse Voltage Reverse Voltage Average Forward Current Maximum Peak Forward Current Non-Repetitive Peak Forward Surge Current ( t = 10 ms) Power Dissipation Junction Temperature Storage Temperature Range Symbol VRM VR IO IFM IFSM Pd Tj Tstg Value 12 10 50 150 1 150 125 - 55 to + 125 Unit V V mA mA A mW O C C O Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 50 mA Reverse Current at VR = 10 V Reverse Breakdown Voltage at... |
Document |
1SS321 Data Sheet
PDF 184.50KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 1SS321 |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Type Diode | |
2 | 1SS321 |
Guangdong Kexin Industrial |
LOW VOLTAGE HIGH SPEED SWITCHING | |
3 | 1SS322 |
Toshiba Semiconductor |
Silicon Epitaxial Schottky Barrier Type Diode | |
4 | 1SS322 |
Kexin |
LOW VOLTAGE HIGH SPEED SWITCHING DIODES | |
5 | 1SS300 |
Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode | |
6 | 1SS300 |
Kexin |
ULTRA HIGH SPEED SWITCHING APPLICATIONS DIODES |