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1SS321 |
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| Part Number | 1SS321 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS321 Low-Voltage High-Speed Switching AEC-Q101 Qualified (Note1) Low forward voltage: VF(2) = 0.42 V (typ.) Low reverse current: IR = 500 ... |
| Features |
(i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 1.5.
Electrical Characteristics (Ta = 25°C)
Characteristics
Forward voltage
Reverse current Total capacitance
Marking
Symbol
VF (1) VF (2) VF (3)
IR CT
Test Condition
IF = 1 mA IF = 10 mA IF = 50 mA VR ... |
| Document |
 1SS321 Data Sheet
PDF 268.13KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | 1SS321 |
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| 2 | 1SS321 |
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Desde 2024. D4U Semiconductor.
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