Busque con el número de pieza junto con el fabricante o la descripción
MI3045S |
Click to view a larger image
| Part Number | MI3045S |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | www.vishay.com M(B,I)3035S, M(B,I)3045S Vishay General Semiconductor Schottky Barrier Rectifier TO-220AB TO-263AB K M30xxS 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-262AA K A NC MB30xxS NC K A HEATS... |
| Features |
• Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s per JESD22-B106 (for TO-220AB and TO-262AA package) • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, and polarity protecti... |
| Document |
 MI3045S Data Sheet
PDF 141.17KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MI3035S |
Vishay |
Schottky Barrier Rectifier |
|
| 2 | MI3050H48xx |
MMD |
MIH Series / 5mm x 7mm Ceramic SMD |
|
| 3 | MI3060C |
Vishay |
Dual Common Cathode Schottky Rectifier |
|
| 4 | MI308 |
Mitsubishi Electric |
PIN Diode RF Power Switching |
|
| 5 | MI3130 |
VBsemi |
N-Channel MOSFET |
|
| 6 | MI31T |
Micro Electronics |
INFRARED EMITTING DIODE |
|
Desde 2024. D4U Semiconductor.
|