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MI3035S |
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| Part Number | MI3035S |
| Manufacturer | Vishay (https://www.vishay.com/) |
| Description | www.vishay.com M(B,I)3035S, M(B,I)3045S Vishay General Semiconductor Schottky Barrier Rectifier TO-220AB TO-263AB K M30xxS 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-262AA K A NC MB30xxS NC K A HEATSINK MI30xxS PIN 1 3 2 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. 30 A 35 V, 45 V 200 A 0.61 V 150 °C FEATURES • Gu. |
| Features |
• Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s per JESD22-B106 (for TO-220AB and TO-262AA package) • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, and polarity protecti. |
| Datasheet |
 MI3035S Data Sheet
PDF 141.17KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MI3045S |
Vishay |
Schottky Barrier Rectifier |
|
| 2 | MI3050H48xx |
MMD |
MIH Series / 5mm x 7mm Ceramic SMD |
|
| 3 | MI3060C |
Vishay |
Dual Common Cathode Schottky Rectifier |
|
| 4 | MI308 |
Mitsubishi Electric |
PIN Diode RF Power Switching |
|
| 5 | MI3130 |
VBsemi |
N-Channel MOSFET |
|
| 6 | MI31T |
Micro Electronics |
INFRARED EMITTING DIODE |
|
| 7 | MI31TA |
Micro Electronics |
INFRARED EMITTING DIODE |
|
| 8 | MI320240A |
MULTI-INNO TECHNOLOGY |
Display Module |
|
| 9 | MI32T |
Micro Electronics |
INFRARED EMITTING DIODE |
|
| 10 | MI32T-L |
Micro Electronics |
INFRARED EMITTING DIODE |
|
Desde 2024. D4U Semiconductor.
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