Busque con el número de pieza junto con el fabricante o la descripción
MI3130 |
Click to view a larger image
| Part Number | MI3130 |
| Manufacturer | VBsemi |
| Description | MI3130-VB MI3130-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.022 at VGS = 4.5 V 30 0.030 at VGS = 2.5 V ID (A)a 6.8 6.0 Qg (Typ.) 10 nC FEATURES • Halogen-free • TrenchFET® Power MOSFET APPLICATIONS • Load Switches for Portable Devices RoHS COMPLIANT D D G GD S S N-Channel MOSFET ABSOLUTE MAXI. |
| Features |
• Halogen-free • TrenchFET® Power MOSFET APPLICATIONS • Load Switches for Portable Devices RoHS COMPLIANT D D G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 30 V VGS ± 20 TC = 25 °C 6.8a Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID 6a 6.8 a, b , c TA = 70 °C 6 a, b, c A Pulsed Drain Current IDM 30 Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS 5.2 2.1b, c TC = 25 °C 6.3 Maximum Power Dissipation TC = 70 °C TA = 2. |
| Datasheet |
 MI3130 Data Sheet
PDF 255.02KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MI31T |
Micro Electronics |
INFRARED EMITTING DIODE |
|
| 2 | MI31TA |
Micro Electronics |
INFRARED EMITTING DIODE |
|
| 3 | MI3035S |
Vishay |
Schottky Barrier Rectifier |
|
| 4 | MI3045S |
Vishay |
Schottky Barrier Rectifier |
|
| 5 | MI3050H48xx |
MMD |
MIH Series / 5mm x 7mm Ceramic SMD |
|
| 6 | MI3060C |
Vishay |
Dual Common Cathode Schottky Rectifier |
|
| 7 | MI308 |
Mitsubishi Electric |
PIN Diode RF Power Switching |
|
| 8 | MI320240A |
MULTI-INNO TECHNOLOGY |
Display Module |
|
| 9 | MI32T |
Micro Electronics |
INFRARED EMITTING DIODE |
|
| 10 | MI32T-L |
Micro Electronics |
INFRARED EMITTING DIODE |
|
Desde 2024. D4U Semiconductor.
|