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IRF3710ZPbF |
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| Part Number | IRF3710ZPbF |
| Manufacturer | International Rectifier |
| Description | This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperatu... |
| Features |
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
IRF3710ZP... |
| Document |
 IRF3710ZPbF Data Sheet
PDF Direct Link |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF3710Z |
International Rectifier |
HEXFET Power MOSFET |
|
| 2 | IRF3710Z |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IRF3710ZGPbF |
International Rectifier |
Power MOSFET |
|
| 4 | IRF3710ZL |
International Rectifier |
HEXFET Power MOSFET |
|
| 5 | IRF3710ZL |
INCHANGE |
N-Channel MOSFET |
|
| 6 | IRF3710ZLPbF |
International Rectifier |
HEXFET Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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