Busque con el número de pieza junto con el fabricante o la descripción
K2930 |
Click to view a larger image
| Part Number | K2930 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK2930 Silicon N Channel MOS FET High Speed Power Switching ADE-208-553C (Z) 4th. Edition Jun 1998 Features • Low on-resistance R DS =0.020 Ω typ. • High speed switching • 4V gate drive device can b... |
| Features |
• Low on-resistance R DS =0.020 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO –220AB D G 1 2 S 3 1. Gate 2. Drain(Flange 3. Source 2SK2930 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 ±20 35 140 35 35 105 50 150 –55 to +150 Unit V V A A A A mJ W °C °C ... |
| Document |
 K2930 Data Sheet
PDF 51.96KB |
Desde 2024. D4U Semiconductor.
|