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K2929 |
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| Part Number | K2929 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SK2929 Silicon N Channel MOS FET High Speed Power Switching ADE-208-552C (Z) 4th. Edition Jun 1998 Features • Low on-resistance R DS =0.026 Ω typ. • High speed switching • 4V gate drive device can b... |
| Features |
• Low on-resistance R DS =0.026 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO –220AB D G 1 2 S 3 1. Gate 2. Drain(Flange 3. Source 2SK2929 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 ±20 25 100 25 20 34 50 150 –55 to +150 Unit V V A A A A mJ W °C °C ... |
| Document |
 K2929 Data Sheet
PDF 51.50KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | K2925 |
Hitachi |
Silicon N-Channel MOSFET |
|
| 2 | K2926 |
Hitachi Semiconductor |
2SK2926 |
|
| 3 | K2900-01 |
Fuji Electric |
N-channel MOS-FET |
|
| 4 | K2902-01MR |
Fuji Electric |
2SK2902-01MR |
|
| 5 | K2915 |
Toshiba Semiconductor |
2SK2915 |
|
| 6 | K2917 |
Toshiba Semiconductor |
2SK2917 |
|
| 7 | K2919 |
Sanyo |
2SK2919 |
|
| 8 | K2930 |
Hitachi Semiconductor |
2SK2930 |
|
| 9 | K2936 |
Hitachi Semiconductor |
2SK2936 |
|
| 10 | K2936 |
Renesas |
Silicon N Channel MOS FET |
|
Desde 2024. D4U Semiconductor.
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