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BDX18 |
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| Part Number | BDX18 |
| Manufacturer | Comset Semiconductors |
| Description | BDX18 – BDX18N PNP SILICON TRANSISTOR EPITAXIAL BASE LF Large Signal Power Amplification High Current Switching Thermal Fatigue Inspection Compliance to RoHS Applications : • • • • Series and shunt r... |
| Features |
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VCEO(SUS) VCEX(SUS) VCER(SUS)
Ratings
Collector-Emitter Breakdown Voltage (*) Collector-Emitter Breakdown Voltage (*) Collector-Emitter Breakdown Voltage (*)
Test Condition(s)
IC=200 mA IB=0 IC=-100 mA VBE=1.5 V IC=-200 mA RBE=100 Ω VCE=-90 V VBE=1.5 V VCE=-60 V, VBE=1.5 V TCASE=150°C VCE=-70 V VBE=1.5 V VCE=-60 V, VBE=1.5 V TCASE=150°C
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Min
-60 -60 -90 -70 -70 -65 -
Typ
-
Max
-5 -10
Unit
V V V
BDX18 BDX18N BDX18 BDX18N BDX18 BDX18N BDX18
ICEX
Collector-Emitter Cutoff Current
mA BDX18N BD... |
| Document |
 BDX18 Data Sheet
PDF 129.23KB |
Desde 2024. D4U Semiconductor.
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