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| Part Number | BDX11 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BDX11 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V (Min) ·High Current Capability ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose power amplifier and switching appli. |
| Features | X UNIT VCE(sat) Collector-Emitter Saturation Voltage IC=5A; IB= 0.5A 1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC=5A; IB= 0.5A 1.5 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 140 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 6 V hFE-1 DC Current Gain IC=1A; VCE= 4V 60 200 . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BDX10 |
Seme LAB |
Bipolar NPN Device |
|
| 2 | BDX12 |
Seme LAB |
Bipolar NPN Device |
|
| 3 | BDX12 |
INCHANGE |
NPN Transistor |
|
| 4 | BDX13 |
INCHANGE |
NPN Transistor |
|
| 5 | BDX14 |
INCHANGE |
PNP Transistor |
|
| 6 | BDX14A |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 7 | BDX14A |
TT |
PNP Epitaxial Silicon Bipolar Transistor |
|
| 8 | BDX14AA |
Seme LAB |
PNP Silicon Transistor |
|
| 9 | BDX16 |
INCHANGE |
PNP Transistor |
|
| 10 | BDX16A |
Seme LAB |
Bipolar PNP Device |
|
Desde 2024. D4U Semiconductor.
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