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| Part Number | BDX12 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BDX12 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for application in industrial and . |
| Features | Silicon NPN Power Transistor INCHANGE Semiconductor BDX12 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=50mA; IB= 0 120 V ICBO Collector Cutoff Current VCB=140V ; IE= 0 0.1 mA ICEO Collector Cutoff Current VCE=120V;IB= 0 0.5 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 0. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BDX10 |
Seme LAB |
Bipolar NPN Device |
|
| 2 | BDX11 |
Seme LAB |
Bipolar NPN Device |
|
| 3 | BDX11 |
INCHANGE |
NPN Transistor |
|
| 4 | BDX13 |
INCHANGE |
NPN Transistor |
|
| 5 | BDX14 |
INCHANGE |
PNP Transistor |
|
| 6 | BDX14A |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 7 | BDX14A |
TT |
PNP Epitaxial Silicon Bipolar Transistor |
|
| 8 | BDX14AA |
Seme LAB |
PNP Silicon Transistor |
|
| 9 | BDX16 |
INCHANGE |
PNP Transistor |
|
| 10 | BDX16A |
Seme LAB |
Bipolar PNP Device |
|
Desde 2024. D4U Semiconductor.
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