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NDB6030PL |
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| Part Number | NDB6030PL |
| Manufacturer | Fairchild |
| Description | These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially... |
| Features |
-30 A, -30 V. RDS(ON) = 0.042 Ω @ VGS= -4.5 V RDS(ON) = 0.025 Ω @ VGS= -10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. High density cell design for extremely low RDS(ON). 175°C maximum junction temperature rating.
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S
G
D
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage
T C = 25°C unless otherwise noted
NDP6030PL -30 ±16 -30 -90 75 0.5 -65 to 175... |
| Document |
 NDB6030PL Data Sheet
PDF 56.60KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NDB6030 |
Fairchild |
N-Channel MOSFET |
|
| 2 | NDB6030L |
Fairchild |
N-Channel MOSFET |
|
| 3 | NDB603 |
Fairchild |
N-Channel MOSFET |
|
| 4 | NDB603AL |
Fairchild |
N-Channel MOSFET |
|
| 5 | NDB6020 |
Fairchild |
N-Channel MOSFET |
|
| 6 | NDB6020P |
ON Semiconductor |
P-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 7 | NDB6020P |
Fairchild |
N-Channel MOSFET |
|
| 8 | NDB6050 |
Fairchild |
N-Channel MOSFET |
|
| 9 | NDB6050L |
Fairchild |
N-Channel MOSFET |
|
| 10 | NDB6051 |
Fairchild |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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