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2SD1366 |
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| Part Number | 2SD1366 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SD1366 Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 1 3 2 4 1. Base 2. Collector 3. Emitter 4. Collector (Flange) 2SD1366 Absolute Maximum Ratings (Ta = 25°C) It... |
| Features |
Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Gain bandwidth product Collector output capacitance Note: Mark hFE AA 85 to 170 AB 120 to 240 V(BR)EBO I CBO I EBO hFE*
85 — — — —
— 0.15 0.9 240 22
240 0.3 1.0 — — V V MHz pF
VCE(sat) VBE(sat) fT Cob
I C = 0.8 A, IB = 0.08 A, Pulse I C = 0.8 A, IB = 0.08 A, Pulse VCE = 2 V, IC = 0.5 A, Pulse VCB = 10 V, IE = 0, f = 1 MHz
1. The 2SD1366 is grouped by h FE as follows.
2
2SD1366
Maximum Collector Dissipation Curve 1.2 Collector Power Dissipa... |
| Document |
 2SD1366 Data Sheet
PDF 31.36KB |
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