Busque con el número de pieza junto con el fabricante o la descripción
FDC6303N |
Click to view a larger image
| Part Number | FDC6303N |
| Manufacturer | Fairchild Semiconductor |
| Description | These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially ... |
| Features |
25 V, 0.68 A continuous, 2 A Peak. RDS(ON) = 0.6 Ω @ VGS = 2.7 V RDS(ON) = 0.45 Ω @ VGS= 4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5 V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Replace multiple NPN digital transistors (IMHxA series) with one DMOS FET.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
Mark: .303
4
3
5
2
6
1
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD TJ,TSTG ESD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
T A = 25°C unless otherwise noted
FDC6303N 25 8 - Con... |
| Document |
 FDC6303N Data Sheet
PDF 72.13KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDC6301N |
Fairchild Semiconductor |
Dual N-Channel / Digital FET |
|
| 2 | FDC6301N |
ON Semiconductor |
Dual N-Channel Digital FET |
|
| 3 | FDC6302P |
Fairchild Semiconductor |
Digital FET/ Dual P-Channel |
|
| 4 | FDC6302P |
ON Semiconductor |
Dual P-Channel MOSFET |
|
| 5 | FDC6304P |
Fairchild Semiconductor |
Digital FET/ Dual P-Channel |
|
| 6 | FDC6304P |
ON Semiconductor |
Dual P-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
|