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2SH28 |
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| Part Number | 2SH28 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SH28 Silicon N Channel IGBT High Speed Power Switching ADE-208-790A(Z) 2nd. Edition May 1999 Features • High speed switching • Low on-voltage Outline TO–220AB C G 1 E 2 3 1. Gate 2. Collector (... |
| Features |
• High speed switching • Low on-voltage Outline TO –220AB C G 1 E 2 3 1. Gate 2. Collector (Flange) 3. Emitter 2SH28 Absolute Maximum Ratings (Ta = 25°C) Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak current Collector dissipation Channel temperature Storage temperature Note: 1. Value at Tc = 25°C Symbol VCES VGES IC ic(peak) PC Tj Tstg Note1 Ratings 600 ±20 20 40 60 150 –55 to +150 Unit V V A A W °C °C Electrical Characteristics (Ta = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Symbol I CES I GES Min — — 6.0 —... |
| Document |
 2SH28 Data Sheet
PDF 43.22KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SH20 |
Hitachi Semiconductor |
Silicon N-Channel IGBT |
|
| 2 | 2SH20 |
Toshiba |
SILICON P EMITTER PLANAR TYPE TRANSISTOR |
|
| 3 | 2SH21 |
Hitachi Semiconductor |
N-Channel MOSFET |
|
| 4 | 2SH21 |
Toshiba |
SILICON P EMITTER PLANAR TYPE TRANSISTOR |
|
| 5 | 2SH22 |
Hitachi Semiconductor |
N-Channel MOSFET |
|
| 6 | 2SH26 |
Hitachi Semiconductor |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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