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EMB05N10HS |
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| Part Number | EMB05N10HS |
| Manufacturer | Excelliance MOS |
| Description | N-CH BVDSS 100V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 5.5mΩ 7.5mΩ ID @TC=25℃ 122.0A ID @TA=25℃ 16.0A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪A... |
| Features |
bient3
RθJA
1Pulse width limited by maximum junction temperature.
2Duty cycle < 1％
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
4Guarantee by Engineering test
TYPICAL
2020/9/2 A.0
EMB05N10HS
LIMITS
±20 122 77 16 13 196 36 64.8 32.4 138.9 55.6 2.5 1.6 -55 to 150
UNIT V
A
mJ W W °C
MAXIMUM
0.9 50
UNIT °C/W
P.1
EMB05N10HS
▪ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS MIN
STATIC
Drain-Source Breakdown Voltage4 Gate Threshold Voltage4 Gate-Body Leakage4 Zero Gate Voltage Drain Current4
On-State Drain Current1 Drain-Sou... |
| Document |
 EMB05N10HS Data Sheet
PDF 512.42KB |
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Desde 2024. D4U Semiconductor.
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