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GAN190-650EBE |
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| Part Number | GAN190-650EBE |
| Manufacturer | nexperia (https://www.nexperia.com/) |
| Description | The GAN140-650EBE is a general purpose 650 V, 190 mΩ Gallium Nitride (GaN) FET in a DFN 8 mm x 8 mm surface mount package. It is a normally-off e-mode device offering superior performance. 2. Feature... |
| Features |
• Enhancement mode - normally-off power switch • Ultra high frequency switching capability • No body diode • Low gate charge, low output charge • Qualified for standard applications • ESD protection • RoHS, Pb-free, REACH-compliant • High efficiency and high power density • Low package inductance and low package resistance 3. Applications • High power density and high efficiency power conversion • AC-to-DC converters, totem pole PFC • DC-to-DC converters • Fast battery charging, mobile phone, laptop, tablet and USB type-C chargers • Datacom and telecom (AC-to-DC and DC-to-DC) converters • Mot... |
| Document |
 GAN190-650EBE Data Sheet
PDF 7.91MB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | GAN190-650FBE |
nexperia |
GaN FET |
|
| 2 | GAN111-650WSB |
nexperia |
Gallium Nitride (GaN) FET |
|
| 3 | GAN140-650EBE |
nexperia |
GaN FET |
|
| 4 | GAN140-650FBE |
nexperia |
GaN FET |
|
| 5 | GAN039-650NBB |
nexperia |
Gallium Nitride (GaN) FET |
|
| 6 | GAN039-650NBBA |
nexperia |
GaN FET |
|
Desde 2024. D4U Semiconductor.
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