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GAN7R0-150LBE |
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| Part Number | GAN7R0-150LBE |
| Manufacturer | nexperia (https://www.nexperia.com/) |
| Description | The GAN7R0-150LBE is a general purpose 150 V, 7 mΩ Gallium Nitride (GaN) FET in a Land Grid Array (LGA) package. It is a normally-off e-mode device offering superior performance. 2. Features and bene... |
| Features |
• Enhancement mode - normally-off power switch • Ultra high frequency switching capability • No body diode • Low gate charge, low output charge • Qualified for standard applications • ESD protection • RoHS, Pb-free, REACH-compliant • High efficiency and high power density • Land Grid Array (LGA) package 2.2 mm x 3.2 mm x 0.774 mm 3. Applications • High power density and high efficiency power conversion • AC-to-DC converters, (secondary stage) • High frequency DC-to-DC converters in 48 V systems • 400 V to 48 V LLC converters, secondary (rectification) side • Fast battery charging, mobile phon... |
| Document |
 GAN7R0-150LBE Data Sheet
PDF 262.81KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | GAN039-650NBB |
nexperia |
Gallium Nitride (GaN) FET |
|
| 2 | GAN039-650NBBA |
nexperia |
GaN FET |
|
| 3 | GAN039-650NTB |
nexperia |
Gallium Nitride (GaN) FET |
|
| 4 | GAN041-650WSB |
nexperia |
GaN FET |
|
| 5 | GAN063-650WSA |
nexperia |
GaN FET |
|
| 6 | GAN080-650EBE |
nexperia |
GaN FET |
|
Desde 2024. D4U Semiconductor.
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