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IRFP260 |
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| Part Number | IRFP260 |
| Manufacturer | INCHANGE |
| Description | iscN-Channel MOSFET Transistor IRFP260 ·FEATURES ·Low drain-source on-resistance: RDS(ON) ≤55mΩ @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum ... |
| Features |
·Low drain-source on-resistance: RDS(ON) ≤55mΩ @VGS=10V ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 46 A IDM Drain Current-Single Pulsed 180 A PD Total Dissipation @TC=25℃ 280 W Tj Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature... |
| Document |
 IRFP260 Data Sheet
PDF 394.45KB |
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