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IRFP260MPBF |
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| Part Number | IRFP260MPBF |
| Manufacturer | International Rectifier |
| Description | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in . |
| Features | 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Thermal Resistance RθJC RθCS RθJA www.irf.com Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Max. 50 35 200 300 2.0 ±20 560 50 . |
| Datasheet |
 IRFP260MPBF Data Sheet
PDF 251.57KB |
| Distributor | Stock | Price | Buy |
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IRFP260MPbF |
| Part Number | IRFP260MPbF |
| Manufacturer | Infineon |
| Title | IR MOSFET |
| Description | V(BR)DSS RDS(on) max. ID IRFP260MPbF IR MOSFET™ 200V 0.04 50A IR MOSFET™ technology from Infineon utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged device design that IR MOSFET™ devices. |
| Features |
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free Description V(BR)DSS RDS(on) max. ID IRFP260MPbF IR MOSFET™ 200V 0.04 50A IR MOSFET™ technology from Infineon utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. Thi. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFP260M |
Infineon |
IR MOSFET |
|
| 2 | IRFP260M |
INCHANGE |
N-Channel MOSFET |
|
| 3 | IRFP260 |
IXYS Corporation |
Standard Power MOSFET |
|
| 4 | IRFP260 |
Vishay Siliconix |
Power MOSFET |
|
| 5 | IRFP260 |
International Rectifier |
Power MOSFET |
|
| 6 | IRFP260 |
INCHANGE |
N-Channel MOSFET |
|
| 7 | IRFP260N |
International Rectifier |
Power MOSFET |
|
| 8 | IRFP260N |
INCHANGE |
N-Channel MOSFET |
|
| 9 | IRFP260NPBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 10 | IRFP260NPBF |
INCHANGE |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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