Busque con el número de pieza junto con el fabricante o la descripción
IRFP260M |
Click to view a larger image
| Part Number | IRFP260M |
| Manufacturer | INCHANGE |
| Description | isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFP260M，IIRFP260M ·FEATURES ·Static drain-source on-resistance: RDS(on)≤40mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Speed Power Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VAL. |
| Features |
·Static drain-source on-resistance: RDS(on)≤40mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Speed Power Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 50 IDM Drain Current-Single Pulsed 200 PD Total Dissipation @TC=25℃ 300 Tj Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rt. |
| Datasheet |
 IRFP260M Data Sheet
PDF 242.75KB |
| Distributor | Stock | Price | Buy |
|---|
IRFP260M |
| Part Number | IRFP260M |
| Manufacturer | Infineon |
| Title | IR MOSFET |
| Description | V(BR)DSS RDS(on) max. ID IRFP260MPbF IR MOSFET™ 200V 0.04 50A IR MOSFET™ technology from Infineon utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and rugged device design that IR MOSFET™ devices. |
| Features |
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements Lead-Free Description V(BR)DSS RDS(on) max. ID IRFP260MPbF IR MOSFET™ 200V 0.04 50A IR MOSFET™ technology from Infineon utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. Thi. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFP260 |
IXYS Corporation |
Standard Power MOSFET |
|
| 2 | IRFP260 |
Vishay Siliconix |
Power MOSFET |
|
| 3 | IRFP260 |
International Rectifier |
Power MOSFET |
|
| 4 | IRFP260 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IRFP260MPbF |
Infineon |
IR MOSFET |
|
| 6 | IRFP260MPBF |
International Rectifier |
Power MOSFET |
|
| 7 | IRFP260N |
International Rectifier |
Power MOSFET |
|
| 8 | IRFP260N |
INCHANGE |
N-Channel MOSFET |
|
| 9 | IRFP260NPBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 10 | IRFP260NPBF |
INCHANGE |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
|