Busque con el número de pieza junto con el fabricante o la descripción
2SC1906 |
Click to view a larger image
| Part Number | 2SC1906 |
| Manufacturer | INCHANGE |
| Description | ·Low Noise ·High Gain Bandwidth Product ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in VHF amplifier,mixer... |
| Features |
R)CEO Collector-Emitter Breakdown Voltage IC= 3mA ; RBE= ∞
19
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10μA ; IC= 0
2
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA ; IB= 4mA
1.0
V
ICBO
Collector Cutoff Current
VCB= 10V; IE= 0
0.5 μA
hFE
DC Current Gain
IC= 10mA ; VCE= 10V
40
fT
Current-Gain—Bandwidth Product
IC= 10mA ; VCE= 10V
600 1000
MHz
COB
Output Capacitance
IE= 0 ; VCB= 10V;f= 1.0MHz
1.0 2.0 pF
rbb’ • CC Base Time Constant VCB= 10V,IC = 10 mA,f = 31.8 MHz 10 25 ps PG Power Gain VCE = 10 V,IC = 5mA;f = 45MHz 33 dB PG Power Gain VCE = ... |
| Document |
 2SC1906 Data Sheet
PDF 174.39KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC1904 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SC1904 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SC1905 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC1905 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SC1906 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SC1907 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
Desde 2024. D4U Semiconductor.
|