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BDT60BF |
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| Part Number | BDT60BF |
| Manufacturer | INCHANGE |
| Description | ·DC Current Gain -hFE = 750(Min)@ IC= -1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT60F; -80V(Min)- BDT60AF -100V(Min)- BDT60BF; -120V(Min)- BDT60CF ·Complement to Type BDT6... |
| Features |
re Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
isc website：www.iscsemi.com
MAX UNIT 5 ℃/W
1 isc & iscsemi is registered trademark
isc Silicon PNP Darlington Power Transistors BDT60F/AF/BF/CF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDT60F
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BDT60AF BDT60BF
IC= -30mA; IB= 0
BDT60CF
VCE(sat) VBE(on)
ICBO ICEO
Collector-Emitter Saturation Voltage IC= -1.5A; IB= -6mA
Base-Emitter On Voltage Collector Cutoff Current Collector Cuto... |
| Document |
 BDT60BF Data Sheet
PDF 212.83KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BDT60B |
Power Innovations Limited |
PNP Transistor |
|
| 2 | BDT60B |
New Jersey Semi-Conductor |
PNP SILICON POWER DARLINGTONS |
|
| 3 | BDT60B |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 4 | BDT60 |
Power Innovations Limited |
PNP Transistor |
|
| 5 | BDT60 |
New Jersey Semi-Conductor |
PNP SILICON POWER DARLINGTONS |
|
| 6 | BDT60 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
Desde 2024. D4U Semiconductor.
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