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2SD1415 |
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| Part Number | 2SD1415 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 3V ·Complement to... |
| Features |
otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 7A; IB= 14mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 6mA
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE -1
DC Current Gain
IC= 3A ; VCE= 3V
hFE -2
DC Current Gain
IC= 7A ; VCE= 3V
2SD1415
MIN TYP. MAX UNIT
100
V
1.5
V
2.0
V
2.5
V
100 μA
3.0
mA
2000
15000
1000
NOTICE： ISC reser... |
| Document |
 2SD1415 Data Sheet
PDF 210.36KB |
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Desde 2024. D4U Semiconductor.
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