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2SB763 |
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| Part Number | 2SB763 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·High Collector Power Dissipation ·Complement to Type 2SD858 ·Minimum Lot-to-Lot variations for robust device perform... |
| Features |
ollector-Emitter Saturation Voltage IC= -5A; IB= -0.5A
VBE(on) Base-Emitter On Voltage
IC= -3A; VCE= -4V
ICEO
Collector Cutoff Current
VCE= -30V; IB= 0
ICES
Collector Cutoff Current
VCE= -60V; VBE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -1A; VCE= -4V
hFE-2
DC Current Gain
IC= -3A; VCE= -4V
hFE-1 Classifications R Q P 40-90 70-150 120-250 2SB763 MIN TYP. MAX UNIT -60 V -1.5 V -1.6 V -700 μA -400 μA -1 mA 40 250 20 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notificat... |
| Document |
 2SB763 Data Sheet
PDF 216.92KB |
Desde 2024. D4U Semiconductor.
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