2SB762 Datasheet. existencias, precio

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2SB762 SILICON POWER TRANSISTOR

Features

B762A 2SB762 2SB762A VCE=-60V; VBE=0 CONDITIONS SYMBOL 2SB762 2SB762A MIN -60 TYP. MAX UNIT VCEO Collector-emitter breakdown voltage V -80 -1.5 -2.0 V V VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage ICES Collector cut-off current -400 VCE=-80V; VBE=0 VCE=-30V; IB=0 -700 VCE=-60V; IB=0 VEB=-5V; IC=0 IC=-1A ; VCE=-4V IC=-3A ; VCE=-4V 40 15 -7 250 µA ICEO Collector cut-off current µA IEBO hFE-1 hFE-2 Emitter cut-off current DC current gain DC current gain mA Switching times ton toff Turn-on time IC=-4A ; IB1=-IB2=-0.4 A Turn-off time 1.3 µs 0.3 µs h.

2SB762 SavantIC Datasheet
PDF 122.39KB

·With TO-220C package ·Complement to type 2SD857/857A ·Low collector saturation voltage APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Tc=25 ) SYMBOL PARAMETER 2SB762 VCBO Collector-base voltage 2SB762A 2SB762 VCEO Collector-emitter volta.

2SB762 INCHANGE Datasheet
PDF 122.39KB

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD857 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Col.

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