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2SB760 PNP Transistor

2SB760

2SB760
2SB760 2SB760
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Part Number 2SB760
Manufacturer INCHANGE
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD855 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Ba.
Features r Saturation Voltage IC= -1A; IB= -0.125A VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -4V ICEO Collector Cutoff Current VCE= -60V; IB= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -0.2A; VCE= -4V hFE-2 DC Current Gain IC= -1A; VCE= -4V  hFE-1 Classifications R Q P 40-90 70-150 120-250 2SB760 MIN TYP. MAX UNIT -60 V -1.0 V -1.3 V -300 μA -1 mA 40 250 15 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for .
Datasheet Datasheet 2SB760 Data Sheet
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2SB760

SavantIC
2SB760
Part Number 2SB760
Manufacturer SavantIC
Title SILICON POWER TRANSISTOR
Description ·With TO-220 package ·Low collector saturation voltage ·Complement to type 2SD855 APPLICATIONS ·For audio frequency and radio frequency power amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute .
Features oltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-10mA IB=0 IC=-1mA; IE=0 IE=-1mA; IC=0 IC=-1A; IB=-0.1A IC=-1A; IB=-0.1A VCB=-60V; IE=0 VEB=-5V; IC=0 IC=-0.2A ; VCE=-4V 40 MIN -60 -60 -5 2SB760 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE TYP. MAX UNIT V V V -1.0 -1.5 .


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